Ox
Ox
Ox
Ox
Ox
Ox
Ox
Ox
H+
M+
Al3+
Al3+
Al3+
Ox
Ox
Ox
Al-OH center
OH  molecule
Al-M+ center
Interstitial
Alkali
5-8
Hole trapped in nonbonding
oxygen p orbital
h+
Al-hole center
Aluminum Associated Defects
   Al3+ ions readily substitute for Si4+ ions in quartz.  When such substitution occurs, a charge compensator is needed for charge neutrality.  Four compensators are known in quartz: H+, Li+, Na+ and a hole trapped at an oxygen ion.  Above is a schematic representation of the aluminum associated centers: Al-OH- center, Al-M+ center (where M is an interstitial alkali, either Li+, or Na+), and Al-hole center.  The Al-OH- center is formed when an interstitial proton bonds to an oxygen ion.
   The aluminum related centers are related to acoustic losses and radiation induced frequency shifts in quartz resonators.  These effects can be reduced by an electrodiffusion process called “sweeping,” a process that removes the interstitial cations (H+, Li+, Na+) from the quartz lattice - see next two pages.
   The Al-hole center consists of a hole, i.e., a missing electron, trapped in a nonbonding p orbital of an oxygen ion located near a substitutional Al.  These are so weakly bound (0.03 eV) that, at room temperature, the hole is rapidly jumping among the four oxygens surrounding the Al.  Al-hole centers affect the optical absorption (smoky coloration) of quartz.
   Oxygen vacancy centers, called E’ centers, are another class of point defects.  These centers affect the ultraviolet absorption of quartz.


L. E. Halliburton, J. J. Martin & D. R. Koehler, “Properties of Piezoelectric Materials,” in E. A. Gerber and A. Ballato, Precision Frequency Control, Vol. 1, pp. 1-45, Academic Press, 1985.

L. E. Halliburton, M. E. Markes, and J. J. Martin, “Point Defects in Synthetic Quartz:  A Survey of Spectroscopic Results With Application to Quality Assurance,” Proc. 34th Annual Symposium on Frequency Control, pp. 1-8, 1980, AD-A213670. Proc. copies available from NTIS.

L. E. Halliburton, N. Koumvakalis, M. E. Markes, and J. J. Martin, “Radiation Effects in Crystalline SiO2:  The Role of Aluminum,” J. Appl. Phys., Vol. 52, pp. 3565-3574, 1981.